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research-article

Subsurface damage detection on ground silicon wafers using polarized laser scattering

[+] Author and Article Information
Jingfei Yin

No.2 Linggong Road,Dalian,P.R. China Dalian, Liaoning 116024 China 2296302449@qq.com

Qian Bai

No.2 Linggong Road,Dalian,P.R. China Dalian, Liaoning 116024 China baiqian@dlut.edu.cn

Bi Zhang

1108 Xueyuan Blvd. Dalian University of Technology Shenzhen, Guangdong 518055 China zhangb@sustc.edu.cn

1Corresponding author.

Manuscript received August 31, 2018; final manuscript received July 26, 2019; published online xx xx, xxxx. Assoc. Editor: Laine Mears.

ASME doi:10.1115/1.4044417 History: Received August 31, 2018; Accepted July 27, 2019

Abstract

A silicon wafer is important to the electronic and computer industries. However, subsurface damage (SSD), which is detrimental to the performance and lifetime of a silicon chip, is easily induced in a silicon wafer during a grinding process since silicon is typically a hard and brittle material. Therefore, it is necessary to detect and remove SSD in the subsequent processes. In this study, a polarized laser scattering (PLS) system is installed to detect the SSD in a ground wafer. It is found that not only the subsurface crack but also the residual stress lead to depolarization of an incident light. The effects of residual stress on depolarization are studied. The residual stress results in the photoelasticity which causes the depolarization of the incident light in the PLS system. The depolarization caused by the residual stress is determined by the directions and the difference of the principal stresses. When the polarization direction of the incident light is aligned with one of the principal stresses, the effects of the residual stress can be minimized; therefore, the subsurface crack can be quantitatively estimated by PLS.

Copyright © 2019 by ASME
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