Microscale Laser Shock Peening of Thin Films, Part 2: High Spatial Resolution Material Characterization

[+] Author and Article Information
Wenwu Zhang, Y. Lawrence Yao

Department of Mechanical Engineering, Columbia University, New York, NY 10027

I. C. Noyan

Thin Film Metallurgy Department, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

J. Manuf. Sci. Eng 126(1), 18-24 (Mar 18, 2004) (7 pages) doi:10.1115/1.1645879 History: Received August 01, 2003; Online March 18, 2004
Copyright © 2004 by ASME
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3D image of the indention on the un-shock 1 μm copper thin film on silicon substrate. Berkovich diamond nanoindenter leaves a triangular dent in the sample. The unit in the image is nm. The full scale in the depth direction is 147 nm. The maximum loading is 1000 μN.
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Hardness distribution across shocked 1 μm samples measured using nanoindentation
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Loading and unloading curves measured at different locations of shocked 1 μm samples (a) 244 μJ and (b) 209 μJ. The dashed line, measured far away (250 microns) from the shock center, represents the reference curve.
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Illustration of sample preparation; sample size: 12 by 20 mm; sample materials: copper thin film on single crystal silicon (004) substrate; the film is shocked along (a) a single line, or (b) 7 parallel lines, both at the central region of a sample; and sticky tapes are applied at an end of a sample with laser scribed marks to facilitate positioning in subsequent X-ray microfraction and nanoindentation measurements
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Experimental setup of the X-ray Microdiffraction Experiment (Courtesy of Dr. S. Kaldor)
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Fluorescence measurement of un-shocked copper thin films with X-ray energy at 9.1 KeV (a) Fluorescence spectra of the copper thin films; and (b) Fluorescence intensity distribution across the film surface, step size 2 microns
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Si (004) diffraction intensity contrast across the shocked region measured in 2-micron step size. (a) pulse energy of 244 μJ and 209 μJ, 3 μm sample, single line shocking; and (b) Comparison of single line and 7 line shocking results, pulse energy of 244 μJ, 1 μm sample. The diffraction intensity is normalized to the average background diffraction intensity (14000 counts).
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Variation of diffraction intensity contrast with laser pulse energy and film thickness. Each data point represents the average of three measurements, standard error is used to plot the error bars, and smooth lines are fitted through these data points. The diffraction intensity is normalized to the background diffraction intensity counts
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Simulation results of the strain energy density at the copper-silicon interface
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Comparison of strain energy density (solid line) and X-ray diffraction intensity contrast (dashed line) (a) 1 μm sample, 244 μJ, single line; (b) 3 μm sample, 244 μJ, single line; and (c) 1 μm sample, 244 μJ, 7 lines



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