Subsurface damage (SSD) and grinding damage induced stress (GDIS) are the focus of attention in the study of grinding mechanism. Our previous study proposed a load identification method and analyzed the GDIS in a silicon wafer ground . In this paper, a more concise method for GDIS analysis is proposed. The new method is based on the curvature analysis of the chip deformation, and a deterministic solution of residual stress can be derived out. Relying on the new method, the GDIS distribution feature in the silicon wafer ground by a #600 diamond wheel (average grit size 24 ?m) is studied. The analysis results show that the two principal stresses in the damage layer is more close to each other than that ground by the #3000 diamond wheel (average grit size 4 ?m), which indicates that the GDIS feature in ground silicon wafer is related to the depth of damage layer. Moreover, the GDIS distribution presents a correlation with crystalline orientation. To clarify these results, the SSD is observed by Transmission electron microscopy (TEM). It is found that the type of the defects under the surface is more divers and chaotic than that observed in silicon surface ground by the #3000 diamond wheel. Additionally, it is found that most of the cracks generate and propagate along the slip plane maybe due to the high shear stress and high dislocation density instead of the tensile stress which is recognized as the dominant factor of crack generation in brittle materials grinding process.