Research Papers

Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process

[+] Author and Article Information
Yogesh Jaluria

Hon. Mem. ASME
e-mail: jaluria@jove.rutgers.edu
Department of Mechanical
and Aerospace Engineering,
Rutgers, The State University of New Jersey,
Piscataway, NJ 08854

Manuscript received April 11, 2013; final manuscript received October 17, 2013; published online November 18, 2013. Assoc. Editor: Yung Shin.

J. Manuf. Sci. Eng 135(6), 061013 (Nov 18, 2013) (7 pages) Paper No: MANU-13-1160; doi: 10.1115/1.4025781 History: Received April 11, 2013; Revised October 17, 2013

A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, one validation study is conducted to ensure its accuracy. After that, the flow, temperature and concentration profiles are predicted by numerical modeling. The dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.

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Fig. 1

MOCVD reactor geometry used for validation

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Fig. 2

(a) Spatial distribution of the deposition rate at the temperature of 1000 K; (b) Simulated and experimental GaN deposition rates as functions of temperature

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Fig. 3

Impinging MOCVD reactor geometry used for numerical calculations

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Fig. 4

Results obtained with the parameters fixed at the initial values: (a) temperature field; (b) velocity distribution in m/s

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Fig. 5

The effect of the reactor pressure on the average growth rate of GaN, (a) the other parameters are fixed at their initial values; (b) inlet mass flow rate is fixed as 6.05×10−5 kg/s, while the susceptor temperature and V/III ratio are kept at their initial values.

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Fig. 6

The effect of the susceptor temperature on GaN growth rate, when the other parameters are fixed at their initial values.

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Fig. 7

The effect of the inlet velocity on average GaN growth rate, when the other parameters are fixed at their initial values.

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Fig. 8

The effect of the inlet velocity on growth rate distribution, when the other parameters are fixed at their initial values.

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Fig. 9

Mass fraction distribution of gaseous species along a horizontal line 1 mm above the wafer

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Fig. 10

The effect of the susceptor temperature on the deposition rate distribution, when the other parameters are fixed at their initial values.

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Fig. 11

Nonuniformity of the thin film as a function of the susceptor temperature

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Fig. 12

The results of a parameter study showing the effect of V/III ratio on GaN growth rate, when the other parameters are fixed at their initial values




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