Research Papers

Laser Bending of Silicon Sheet: Absorption Factor and Mechanisms

[+] Author and Article Information
Weixing Xu

e-mail: weixing.xu@unsw.edu.au

L. C. Zhang

e-mail: liangchi.zhang@unsw.edu.au
School of Mechanical
and Manufacturing Engineering,
The University of New South Wales,
New South Wales 2052, Australia

Xuyue Wang

Key Lab for Precision and Non-Traditional
Machining Technology
of the Ministry of Education,
Dalian University of Technology,
Dalian 116024, China
e-mail: wbzzd@dlut.edu.cn

1Corresponding author.

Manuscript received April 1, 2013; final manuscript received September 26, 2013; published online November 5, 2013. Assoc. Editor: Yung Shin.

J. Manuf. Sci. Eng 135(6), 061005 (Nov 05, 2013) (7 pages) Paper No: MANU-13-1128; doi: 10.1115/1.4025579 History: Received April 01, 2013; Revised September 26, 2013

Laser bending of silicon sheet is a process to form three-dimensional microstructural silicon elements in an ambient environment. This study aims to investigate the process mechanism with the aid of both experimental and numerical analyses. To this end, a thin-film thermocouple was prepared to capture the temperature field within the heating zone of the laser beam. A new method was then developed to precisely determine the absorption factor by coupling numerical simulation of the laser bending results with the experimental results. It was found that each laser pulse causes a cycle of sharp temperature rise-drop in a silicon sheet. When the temperature in the heating zone is low, the sheet deforms elastically. When it is beyond the brittle–ductile transition temperature of silicon, however, plastic deformation in the sheet takes place and bending occurs. The bending angle becomes larger with increasing the number of laser beam scanning, once the temperature gradient in the scanning area is large enough.

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Fig. 1

A schematic illustration of a laser sheet bending process

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Fig. 2

The FE model of the laser bending of a silicon sheet

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Fig. 3

Thermal and mechanical properties of (110) surface of silicon

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Fig. 4

Temperature measurement apparatus

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Fig. 5

Calibration results of thin-film thermocouple

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Fig. 6

Temperature variation during laser scan

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Fig. 7

Absorption factor with (a) single pulse and single-way scanning and (b) multi-way scanning

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Fig. 8

Variations of (a) temperature and thermal stress and (b) displacement along y-direction when laser beam first arrived at the middle of sheet

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Fig. 9

Variations of (a) temperature and thermal stress and (b) displacement along y-direction when laser beam second arrived at the middle of sheet

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Fig. 10

Bending angle distribution in the first two scanning process

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Fig. 11

Influence of the scanning passes on the bending angle



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