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Research Papers

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

[+] Author and Article Information
Po Ting Lin, Yogesh Jaluria, Hae Chang Gea

Department of Mechanical and Aerospace Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08855

J. Manuf. Sci. Eng 131(1), 011011 (Jan 15, 2009) (7 pages) doi:10.1115/1.3063689 History: Received February 19, 2008; Revised November 17, 2008; Published January 15, 2009

This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

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Copyright © 2009 by American Society of Mechanical Engineers
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Figure 1

Vertical impinging CVD reactor

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Figure 2

Illustration of effective working area and isolated working area

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Figure 3

Response surfaces of the PWA: (a) 9-point RBF, (b) 13-point RBF, (c) 25-point RBF, (d) 437-point sampling, and (e) 25-point PRS

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Figure 4

Response surfaces of the MDR: (a) 25-point RBF, (b) 437-point sampling, and (c) 25-point PRS

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Figure 5

Response surface of the RMS: (a) 25-point RBF and (b) 437-point sampling

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Figure 6

Response surface of the KUR: (a) 25-point RBF and (b) 437-point sampling

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Figure 7

Optimal solution of maximizing the PWA

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Figure 8

Optimal solution of maximizing the MDR

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Figure 9

Optimal solution of the multiobjective formulation

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