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Technical Briefs

Study on Site-Selective Growth of Carbon Nanotubes and Diamond Films With Barrier Layers

[+] Author and Article Information
Chun-Hsi Su, Chii-Ruey Lin, Guo-Tsai Liau, Ching-Yu Chang

Graduate Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, Taipei, Taiwan 10608, R.O.C.

J. Manuf. Sci. Eng 130(6), 064501 (Oct 09, 2008) (4 pages) doi:10.1115/1.2976120 History: Received March 01, 2007; Revised June 26, 2008; Published October 09, 2008

Microwave plasma jet chemical vapor deposition is used to grow array types of carbon nanotubes and diamond films on silicon substrates. In this study, we report a patterned growth of carbon nanotubes and diamond films using the barrier layer method, wherein the selective areas vary from 20×20μm2 to 30×80μm2. The field-emission measurement shows that the turn-on electric field for patterned carbon nanotubes and diamond films are 1.1V/μm and 5V/μm, respectively. Therefore, this method of site-selective growth of carbon nanotubes and diamond films can be applied to the production of field emitters.

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Copyright © 2008 by American Society of Mechanical Engineers
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Figures

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Figure 1

Schematic installation of the experimental setup with the MPJCVD system

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Figure 2

SEM image of the shielding mesh

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Figure 3

SEM images of the site-selective carbon nanotube array, wherein catalyst sputtering durations in pretreatment are (a) 16 min, (b) 24 min, and (c) 32min

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Figure 4

Raman spectrum and HRTEM image of as-grown CNTs

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Figure 5

Cross-sectional SEM image of the site-selective carbon nanotubes grown after being pretreated by 16 min metal catalyst deposition

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Figure 6

SEM images of the site-selective grown diamond films

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Figure 7

XPS of as-grown diamond films

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Figure 8

Field-emission property of carbon nanotube and diamond film arrays

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