Research Papers

Plastic Deformation in Silicon Crystal Induced by Heat-Assisted Laser Shock Peening

[+] Author and Article Information
Gary J. Cheng

School of Industrial Engineering, Purdue University, West Lafayette, IN 47906

M. Cai

Department of Engineering Technology, University of Houston, Houston, TX 77204

Daniel Pirzada, Maxime J.-F. Guinel, M. Grant Norton

School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164

J. Manuf. Sci. Eng 130(1), 011008 (Feb 06, 2008) (5 pages) doi:10.1115/1.2815343 History: Received February 27, 2007; Revised August 22, 2007; Published February 06, 2008

The response of solid to shock compression has been an interesting topic for more than a century. The present work is the first attempt to experimentally show that plastic deformation can be generated in brittle materials by a heat-assisted laser shock peening process, using silicon crystal as a sample material. Strong dislocation activity and large compressive residual stress are induced by this process. The dislocation structure is characterized with transmission electron microscopy and electron backscattered diffraction. The residual stress is measured using Raman scattering. This work presents a fundamental base for the application of laser shock peening in brittle materials to generate large compressive residual stress and plastic deformation for better mechanical properties, such as fatigue life and fracture toughness.

Copyright © 2008 by American Society of Mechanical Engineers
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Figure 1

Schematic view of heat-assisted LSP of silicon crystal

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Figure 5

Comparison of pole figures before and after LSP of silicon

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Figure 6

Raman scattering pattern of the silicon crystal after laser shock compared with stress-free silicon crystal

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Figure 7

Residual stress distribution of the silicon sample after LSP (laser intensity of 6GW∕cm2, beam size of 1mm, and pulse width of 10ns)

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Figure 2

Montage of bright field TEM images obtained from the laser shocked crystal of silicon showing areas containing dislocations. Electron diffraction pattern indexed to silicon at the [012] zone axis.

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Figure 3

Comparison of boundary map before and after LSP of silicon

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Figure 4

Comparison of misorientations before and after LSP of silicon



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