Study of the Mechanism of Groove Wear of the Diamond Tool in Nanoscale Ductile Mode Cutting of Monocrystalline Silicon

[+] Author and Article Information
M. B. Cai, M. Rahman

Department of Mechanical Engineering, National University of Singapore, Singapore 119260

X. P. Li1

Department of Mechanical Engineering, National University of Singapore, Singapore 119260mpelixp@nus.edu.sg


Corresponding author.

J. Manuf. Sci. Eng 129(2), 281-286 (Sep 18, 2006) (6 pages) doi:10.1115/1.2673567 History: Received March 10, 2006; Revised September 18, 2006

In nanoscale ductile mode cutting of the monocrystalline silicon wafer, micro-, or nanogrooves on the diamond cutting tool flank face are often observed, which is beyond the understanding based on conventional cutting processes because the silicon workpiece material is monocrystalline and the hardness is lower than that of the diamond cutting tool at room temperature. In this study, the mechanism of the groove wear in nanoscale ductile mode cutting of monocrystalline silicon by diamond is investigated by molecular dynamics simulation of the cutting process. The results show that the temperature rise in the chip formation zone could soften the material at the flank face of the diamond cutting tool. Also, the high hydrostatic pressure in the chip formation region could result in the workpiece material phase transformation from monocrystalline to amorphous, in which the material interatomic bond length varies, yielding atom groups of much shorter bond lengths. Such atom groups could be many times harder than that of the original monocrystalline silicon and could act as “dynamic hard particles” in the material. Having the dynamic hard particles ploughing on the softened flank face of the diamond tool, the micro-/nanogrooves could be formed, yielding the micro-/nanogroove wear as observed.

Copyright © 2007 by American Society of Mechanical Engineers
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Figure 5

The output result of MD simulation, showing the amorphous phase of silicon in the chip formation zone and monocrystalline phase of silicon in the nonchip formation zone

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Figure 6

(a) The distribution frequencies of interatomic bond length of the silicon workpiece material in the chip formation zone and nonchip formation zone and (b) 3D representation of the chip formation zone having atom groups with shortened bond lengths (the line marks between the atoms indicate bond lengths shorter than 2.30Å), showing the dynamic hard particles in the chip formation zone

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Figure 1

(a) SEM photographs of the tool flank face after ductile mode cutting, showing micro-/nanogrooves on the diamond tool flank face and (b) subcutting edges of much smaller edge radii formed on the main cutting edge by the micro-/nanogrooves at the tool flank

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Figure 2

The model for the MD simulation of nanoscale ductile mode cutting: (a) a schematic of MD model and (b) a model output of MD simulation system

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Figure 3

Different deformation zones in the workpiece

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Figure 4

Temperature variations of deformation zones A, B, and C in the workpiece



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