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TECHNICAL PAPERS

Thermal Stress Analysis for Rapid Thermal Process With Convective Cooling

[+] Author and Article Information
Shih-Yu Hung

Department of Automation Engineering,  Nan Kai College, 568 Chung Cheng Road, Tsao Tun, Nantou, Taiwan 542, ROC

Ching-Kong Chao

Department of Mechanical Engineering,  National Taiwan University of Science and Technology, 43 Keelung Road, Section 4 Taipei, Taiwan 106, ROC

J. Manuf. Sci. Eng 127(3), 564-571 (Sep 18, 2004) (8 pages) doi:10.1115/1.1949618 History: Received April 23, 2004; Revised September 18, 2004

A fast temperature ramp of rapid thermal processing (RTP) with convective cooling used to shorten the cooling time for the wafer is presented in this paper. Based on thermal and stress analyses, the behavior of the highly coupled physics in RTP, such as radiative heat transfer, transient flow, and thermal stress is studied in detail. From simulation results of the flow field, a large recirculation cell between the wafer edge and the chamber wall is predicted and the effect of buoyancy on the behavior of the flow field is examined. Since the buoyancy-induced recirculation aggregates thermal nonuniformity due to edge effect, a guard ring is then suggested to be placed at the edge of the wafer to reduce the heat loss from the wafer edge and reflect the radiative energy back into the wafer during the cooling process. Furthermore, a large inlet gas mass flow rate is found to suppress the recirculation and shorten the cooling time. However, a fast convective cooling rate would result in a significant temperature difference between center and edge of the wafer, thus causing material failure due to an increase of thermal stresses.

Copyright © 2005 by American Society of Mechanical Engineers
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Figures

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Figure 1

The physical model of the RTP

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Figure 2

The temperature profile on the wafer based on the different mesh in a flow rate of 7000 sccm

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Figure 3

The temperature variation on the center of the wafer based on the different time step

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Figure 4

The temperature profile on wafer under the convective cooling in a flow rate of 7000 sccm

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Figure 5

With the absence of the buoyancy effect, the contour of streamline and the velocity distribution in a cylindrical symmetric chamber

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Figure 6

With the buoyancy effect, the contour of streamline and the velocity distribution in a flow rate of 7000 sccm

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Figure 7

With the buoyancy effect, the contour of streamline and the temperature distribution in a flow rate of 7000 sccm

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Figure 8

The temperature profile on wafer under the convective cooling in a flow rate of 7000 sccm

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Figure 9

With the buoyancy effect, the contour of streamline and the velocity distribution in a flow rate of 1000 sccm

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Figure 10

The temperature profile on wafer under the convective cooling in a flow rate of 1000 sccm

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Figure 11

Variation of the maximal normalized resolved stress in the wafer with four different cooling conditions

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Figure 12

The temperature profile on the wafer with four different cooling conditions

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Figure 13

The distribution of the normalized resolved stress in the wafer with four different cooling conditions

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Figure 14

Variation of the maximal normalized resolved stress in the wafer for the various inlet gas mass flow rates

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Figure 15

The temperature variation on the center of the wafer under three different cooling control schemes

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