Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

[+] Author and Article Information
John Patten

 Western Michigan University, Parkview Campus, 1903 West Michigan Avenue, Kalamazoo, MI 49008

Wei Gao, Kudo Yasuto

 Tohoku University, Sendai, Japan

J. Manuf. Sci. Eng 127(3), 522-532 (Aug 12, 2004) (11 pages) doi:10.1115/1.1949614 History: Received September 17, 2003; Revised August 12, 2004

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

Copyright © 2005 by American Society of Mechanical Engineers
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Figure 1

Experimental setup (photo)

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Figure 12

Machining forces versus crystal orientation

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Figure 11

(a) Max, min, avg forces, (b) force ratios (depth and rake angle)

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Figure 10

TEM-EDAX analysis of ductile chip

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Figure 9

Tool edge chipping and wear

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Figure 8

(a) Attached chip∕burr; (b) ductile chips, and (c) brittle chips

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Figure 7

Typical rough (brittle) surface

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Figure 6

Typical smooth (ductile) surface

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Figure 5

Force data plots for −45deg rake angle tool: (a) 100nm depth of cut; (b) 300nm depth of cut; (c) 500nm depth of cut

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Figure 4

Force data plots for 0deg rake angle tool: (a) 100nm depth of cut; (b) 300nm depth of cut; (c) 500nm depth of cut

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Figure 3

Rake angle (sketch)

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Figure 2

Schematic of the machining∕measuring instrument



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