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TECHNICAL PAPERS

Microscale Laser Shock Peening of Thin Films, Part 1: Experiment, Modeling and Simulation

[+] Author and Article Information
Wenwu Zhang, Y. Lawrence Yao

Department of Mechanical Engineering, Columbia University, New York, NY 10027

I. C. Noyan

Thin Film Metallurgy Department, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

J. Manuf. Sci. Eng 126(1), 10-17 (Mar 18, 2004) (8 pages) doi:10.1115/1.1645878 History: Received August 01, 2003; Online March 18, 2004
Copyright © 2004 by ASME
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References

Figures

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Typical curvature measurement of 1 μm-thick copper film on silicon substrate (a) 2D contour plot of the sample surface height, after LSP; and (b) Surface profile variations.
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Six regions in LSP modeling
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(a) Mass flow from water into plasma and normalized profile of laser intensity; (b) 1D shock pressure comparison of current model and previous model 10; and (c) Consideration of radial and axial expansion effects
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Schematic of laser shock peening (LSP)
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Distribution of the von Mises stress, 1 μm-thick copper film on silicon substrate, pulse energy of 244 μJ (a) 3D overview (the dotted line denotes the symmetrical centerline); (b) detailed view of the interface along the cross section perpendicular to the centerline; and (c) detailed view of the interface along the centerline. For (a) the size is 200 microns in the 11-direction and 300 microns in the 22-direction, of which 225 microns were shock peened. For (b) and (c) only the elements close to the film-substrate interface are shown for viewing clarity.
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Strain coupling at the copper-silicon interface, 1 μm-thick copper film on silicon substrate, pulse energy of 244 μJ (a) distribution of the maximum principal elastic strain along the cross section perpendicular to the centerline; and (b) distribution of the maximum principal elastic strain along the centerline; (c) variations of the elastic strain components in the copper film along the cross section; and (d) variations of the elastic strain components in the silicon substrate along the cross section. For (a) and (b) only the elements close to the film-substrate interface are shown for viewing clarity.
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Stress/strain simulation results, 1 μm-thick copper film on silicon substrate (a) Distribution of residual stresses across the shocked region, pulse energy 244 μJ; (b) Comparison of S11 at 244 and 209 μJ; and (c) Comparison of plastic strain PE11 at 244 and 209 uJ.
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X-ray diffraction intensity contrast measurement across the shocked region measured in 2-micron step size. 244 μJ and 209 μJ, 1 μm-thick copper film on silicon substrate. The diffraction intensity is normalized to the average background diffraction intensity (14000 counts).

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