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TECHNICAL PAPERS

The Effect of Lamps Radius on Thermal Stresses for Rapid Thermal Processing System

[+] Author and Article Information
Ching-Kong Chao, Shih-Yu Hung

Dept. of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China

Cheng-Ching Yu

Dept. of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106-17, Republic of China

J. Manuf. Sci. Eng 125(3), 504-511 (Jul 23, 2003) (8 pages) doi:10.1115/1.1579048 History: Received January 01, 2002; Revised November 01, 2002; Online July 23, 2003
Copyright © 2003 by ASME
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References

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Roozeboom, F., 1992, Manufacturing Equipment Issues in Rapid Thermal Processing, Academic Press, New York.
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Campbell,  S. A., Ahn,  K. L., Kanutson,  K. L., Liu,  B. Y. H., and Leighton,  J. D., 1991, “Steady-State Thermal Uniformity and Gas Flow Patterns in a Rapid Thermal Processing Chamber,” IEEE Trans. Semicond. Manuf., 4(1), pp. 14–20.
Huff, H. R., and Goodall, R. K., 1995, “Challenges and Opportunities for Dislocation Free Silicon Wafer Fabrication and Thermal Processing: An Historical Review,” Proc. 3rd Int. Rapid Thermal Processing Conf., Amsterdam, The Netherlands, Aug. 30–Sept. 1, pp. 9–40.
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Figures

Grahic Jump Location
The physical model of RTP
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Schematic representation of radiative heat transfer between the wafer and the lamps
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The temperature profile on wafer under the constant power ramp-down control scheme
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The temperature profile on wafer under the constant power ramp-down control scheme
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The normalized maximum resolved stress distribution on wafer under the constant power ramp-down control scheme
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The radial displacement distribution on wafer under the constant power ramp-down control scheme
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Variation of the view factor on wafer for two different radii of the lamps
Grahic Jump Location
The temperature profile on wafer under the constant power ramp-down control scheme for two different radii of the lamps
Grahic Jump Location
The temperature variation on wafer under the constant power ramp-down control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the normalized maximum resolved stress on wafer under the constant power ramp-down control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the normalized maximum resolved stress in the wafer under the constant power ramp-down control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the normalized maximum resolved stress in the wafer under the constant power ramp-down control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the temperature at the wafer edge under the constant power ramp-down control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the normalized maximum resolved stress in the wafer under the maximum stress control scheme for the different radii of the lamps
Grahic Jump Location
The temperature variation at wafer edge under the maximum stress control scheme for the different radii of the lamps
Grahic Jump Location
Variation of the normalized maximum resolved stress in the wafer under the maximum stress control scheme for the different heights of the chamber

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