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TECHNICAL PAPERS

The Effect of Lamps Radius on Thermal Stresses for Rapid Thermal Processing System

[+] Author and Article Information
Ching-Kong Chao, Shih-Yu Hung

Dept. of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106, Republic of China

Cheng-Ching Yu

Dept. of Chemical Engineering, National Taiwan University, Taipei, Taiwan 106-17, Republic of China

J. Manuf. Sci. Eng 125(3), 504-511 (Jul 23, 2003) (8 pages) doi:10.1115/1.1579048 History: Received January 01, 2002; Revised November 01, 2002; Online July 23, 2003
Copyright © 2003 by ASME
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References

Figures

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The physical model of RTP
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Schematic representation of radiative heat transfer between the wafer and the lamps
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The temperature profile on wafer under the constant power ramp-down control scheme
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The temperature profile on wafer under the constant power ramp-down control scheme
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The normalized maximum resolved stress distribution on wafer under the constant power ramp-down control scheme
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The radial displacement distribution on wafer under the constant power ramp-down control scheme
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Variation of the view factor on wafer for two different radii of the lamps
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The temperature profile on wafer under the constant power ramp-down control scheme for two different radii of the lamps
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The temperature variation on wafer under the constant power ramp-down control scheme for the different radii of the lamps
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Variation of the normalized maximum resolved stress on wafer under the constant power ramp-down control scheme for the different radii of the lamps
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Variation of the normalized maximum resolved stress in the wafer under the constant power ramp-down control scheme for the different radii of the lamps
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Variation of the normalized maximum resolved stress in the wafer under the constant power ramp-down control scheme for the different radii of the lamps
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Variation of the temperature at the wafer edge under the constant power ramp-down control scheme for the different radii of the lamps
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Variation of the normalized maximum resolved stress in the wafer under the maximum stress control scheme for the different radii of the lamps
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The temperature variation at wafer edge under the maximum stress control scheme for the different radii of the lamps
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Variation of the normalized maximum resolved stress in the wafer under the maximum stress control scheme for the different heights of the chamber

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