Control of Thin Film Growth in Chemical Vapor Deposition Manufacturing Systems: A Feasibility Study

[+] Author and Article Information
Wilson K. S. Chiu, Yogesh Jaluria, Nick G. Glumac

Department of Mechanical and Aerospace Engineering, Rutgers, The State University of New Jersey, New Brunswick, NJ 08855

J. Manuf. Sci. Eng 124(3), 715-724 (Jul 11, 2002) (10 pages) doi:10.1115/1.1465434 History: Received June 01, 2000; Revised December 01, 2001; Online July 11, 2002
Copyright © 2002 by ASME
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Schematic of a vertical impinging chemical vapor deposition reactor
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Design surfaces showing (a) heating cost (b) average deposition rate (c) maximum deviation in deposition rate and (d) the objective function at XTiCl4=5×10−2
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Streamlines and deposition rate distributions for (a) Vinlet=0.05 m/s and (b) Vinlet=0.01 m/s at a susceptor temperature Tsus=873 K and precursor concentration XTiCl4=5×10−2
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Minimum objective function values U(Tsus*,Vinlet*) for selected XTiCl4
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Starting points on the design space for the steepest descent method. Contours of U are shown for XTiCl4=5×10−2
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Extracted profiles from Fig. 5 at (a) Tsus=873 K and (b) Vinlet=0.03 m/s
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Objective function values at each descent step using the Steepest Descent method




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