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TECHNICAL PAPERS

Micro- and Sub-Micromachining of Type IIa Single Crystal Diamond Using a Ti:Sapphire Femtosecond Laser

[+] Author and Article Information
Diwakar Ramanathan, Pal A. Molian

Department of Mechanical Engineering, Iowa State University, Ames, IA 50011

J. Manuf. Sci. Eng 124(2), 389-396 (Apr 29, 2002) (8 pages) doi:10.1115/1.1459083 History: Received October 01, 2000; Revised August 01, 2001; Online April 29, 2002
Copyright © 2002 by ASME
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References

Figures

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A schematic representation of laser micromachining setup
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SEM micrographs of holes (a) trepanned (22 μJ, 150,000 pulses) and (b) percussion drilled (225 μJ, 105,000 pulses)
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SEM micrographs of the (a) front and (b) back of a hole drilled by Q-switched, 200-ns Nd: YAG laser
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Raman spectra of type IIa diamond surfaces (a) before laser irradiation (b) after femtosecond laser irradiation
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Exposure time against pulse energy for trepanned holes
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SEM micrographs showing (a) channels (1-4 from top) and (b) cracking at channel 3
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SEM micrographs of holes drilled (a) 2000 nJ (b) 630 nJ (c) 200 nJ. Exposure time varies from 8–32 ms (from left to right).
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Variation of feature diameter (μm) against exposure time (s) for E=(a) 2000 nJ (b) 630 nJ (c) 200 nJ
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AFM pictures of holes in region D at E=(a) 2000 nJ (b) 630 nJ (32 ms) and (c) 630 nJ (8 ms). Exposure time in parentheses.
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Variation of heat capacity Ce with electron temperature Te
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Variation of electron temperature with depth for threshold and experimental energies (number of pulses=2)

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